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Freescale Semiconductor Technical Data
MC14578 Rev 2, 05/2005
CMOS Micro-Power Comparator plus Voltage Follower
The MC14578 is an analog building block consisting of a very-high input impedance comparator. The voltage follower allows monitoring the noninverting input of the comparator without loading. Four enhancement-mode MOSFETs are also included on chip. These FETs can be externally configured as open-drain or totem-pole outputs. The drains have on-chip static-protecting diodes. Therefore, the output voltage must be maintained between VSS and VDD. The chip requires one external component. A 3.9 M 10% resistor must be connected from the Rbias pin to VDD. This circuit is designed to operate in smoke detector systems that comply with UL217 and UL268 specifications. Features * Applications: Pulse Shapers Line-Powered Smoke Detectors Threshold Detectors Liquid/Moisture Sensors Low-Battery Detectors CO Detector and Micro Interface Operating Voltage Range: 3.5 to 14 V Operating Temperature Range: -30 to 70C Input Current (IN + Pin): 1 pA @ 25C (DIP Only) Quiescent Current: 10 A @ 25C Electrostatic Discharge (ESD) Protection Circuitry on All Pins ORDERING INFORMATION
Device MC14578P Temperature Range -30 to 70C Case No. 648-08 Package Plastic Dip
MC14578
CMOS MICRO-POWER COMPARATOR PLUS VOLTAGE FOLLOWER
P SUFFIX PLASTIC DIP CASE 648-08
* * * * *
VDD Comp OUT IN A IN B OUT A OUT B IN C OUT C1
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
NC IN + NC Buff OUT IN- Rbias VSS OUT C2
Figure 1. Pin Connections
(c) Freescale Semiconductor, Inc., 2005. All rights reserved.
IN +
15
+
IN - 12
Comp
-
2
Comp OUT
IN A
3
5 Rbias 11 Bias Ckt 6
OUT A OUT B
9 IN C 7 8
OUT C2 OUT C1
+
Buff
-
13
Buff OUT
IN B
4 Pin 1 = VDD Pin 10 = VSS Pin 14, 16 = No Connection
Figure 2. Block Diagram Table 1. Maximum Ratings(1) (Voltages Referenced to VSS)
Rating DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Current, Except IN + DC Output Current, IN + DC Output Current, per Pin DC Supply Current, VDD and VSS Pins Power Dissipation, per Package Storage Temperature Lead Temperature (10-Second Soldering) Symbol VDD Vin Vout Iin Iin Iout IDD PD Tstg TL Value -0.5 to +14 -0.5 to VDD +0.5 -0.5 to VDD +0.5 10 1.0 25 50 500 -65 to + 150 260 Unit V V V mA mA mA mA mW C C
1. Maximum Ratings are those values beyond which damage to the device may occur. This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
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Table 2. Electrical Characteristics (Voltages Referenced to VSS, Rbias = 3.9 M to VDD, TA = -30 to 70C Unless Otherwise Indicated)
Characteristic Power Supply Voltage Range Maximum Low-Level Input Voltage, MOSFETs Wired as Inverters; i.e., IN A tied to IN B, OUT A to OUT B, OUT C1 to OUT C2 Minimum High-Level Input voltage, MOSFETs Wired as Inverters; i.e., IN A tied to IN B, OUT A to OUT B, OUT C1 to OUT C2 Comparator Input Offset Voltage Symbol VDD VIL Vout = 9.0 V, IIoutI <1 A Test Condition VDD VDC -- 10.0 Guaranteed Limit 3.5 to 14.0 2.0 Unit V V
VIH
Vout = 1.0 V, IIoutI <1 A
10.0
8.0
V
VIO
TA = 25C, Over Common Mode Range TA = 0 to 50C, Over Common Mode Range
10.0 3.5 to 14.0 3.5 to 14.0
50 75 0.7 to VDD - 1.5 0.5 9.5 100 0.5 0.5 9.5 9.5 1.0 6.0 40 100 100 10
mV
Comparator Common Mode Voltage Range Maximum Low-Level Comparator Output Voltage Minimum High-Level Comparator Output Voltage Buffer Amp Output Offset Voltage Maximum Low-Level Input Voltage, MOSFETs Wired as Inverters; i.e., IN A tied to IN B, OUT A to OUT B, OUT C1 to OUT C2 Minimum High-Level Input Voltage, MOSFETs Wired as Inverters; i.e., IN A tied to IN B, OUT A to OUT B, OUT C1 to OUT C2 Maximum Input Leakage Current IN + (DIP Only) IN + (DIP Only) IN + (SOG), IN A, IN B, IN C, IN - Maximum Off-State MOSFET Leakage Current
VCM VOL VOH VOO VOL IN +: Vin = VSS, IN -: Vin = VDD, Iout = 30 A IN +: Vin = VDD, IN -: Vin= VSS, Iout = -30 A Rload = 10 M to VDD or VSS, Over Common Mode Range OUT C1, OUT C2, Iout = 1.1 mA OUT A, OUT B, Iout = 270 A VOH OUT C1, OUT C2, Iout = -1.1 mA OUT A, OUT B, Iout = 270 A Iin TA = 25C, 40% R.H., Vin = VSS or VDD TA = 50C, Vin = VSS or VDD Vin = VSS or VDD IOZ IN A, IN C: Vin = VDD, OUT A, OUT C2: Vout = VSS or VDD IN B, IN C: Vin = VSS, OUT B, OUT C1: Vout = VSS or VDD
V V V mV V V V V pA
10.0 10.0 -- 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0
nA nA
Maximum Quiescent Current
IDD
TA = 25C IN A, IN B, IN C: Vin = VSS or VDD, IVIN + - VIN - I = 100 mV Iout = 0 A f = 1 kHz
A
Maximum Input Capacitance
IN + Other Inputs
Cin
-- --
5.0 15
pF
MC14578 Sensors Freescale Semiconductor 3
APPLICATIONS INFORMATION
V+ MC14578 1 VDD NC 16
V+
R1
2
COMP OUT
IN +
15
3
IN A
NC
14 R2 13 R3
4 R5 6.8 k Low-battery Indicator D2 6
IN B
BUFF OUT
5
OUT A
IN -
12
V+ R4 3.9 M
D1
OUT B
RBIAS
11
7
IN C
VSS
10
8
OUT C1
OUT C2
9 High = Battery Low Low = Battery Ok
OUTPUT NOTE: IN + and IN - have very high input impedance. Interconnect to these pins should be as short as possible.
Figure 3. Low-Battery Detector
EXAMPLE VALUES Near the switchpoint, the comparator output in the circuit of Figure 3. may chatter or oscillate. This oscillation appears on the signal labelled OUTPUT. In some cases, the oscillation in the transition region will not cause problems. For example, an MPU reading OUTPUT could sample the signal two or three times to ensure a solid level is attained. But, in a low battery detector, this probably is not necessary. To eliminate comparator chatter, hysteresis can be added as shown in Figure 4.. The circuit of Figure 4. requires slightly more operating current than the Figure 3. arrangement.
R1 470 k 820 k 1.2 M
R2 1.3 M 1.2 M 1.2 M 12 R6 15
R3 20 k 39 k 62 k
Nominal Tip Point 4.08 V 5.05 V 6.00 V
2
R7
Figure 4. Adding Hysteresis
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PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL.
DIM A B C D F G H J K L M S INCHES MILLIMETERS MIN MAX MIN MAX 0.740 0.770 18.80 19.55 0.250 0.270 6.35 6.85 0.145 0.175 3.69 4.44 0.015 0.021 0.39 0.53 0.040 0.70 1.02 1.77 0.100 BSC 2.54 BSC 0.050 BSC 1.27 BSC 0.008 0.015 0.21 0.38 0.110 0.130 2.80 3.30 0.295 0.305 7.50 7.74 0 10 0 10 0.020 0.040 0.51 1.01
-A16 9
B
1 8
F S
C
L
-TH G D
16 PL
SEATING PLANE
K
J
M
0.25 (0.010)
M
TA
M STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16.
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16.
CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE
COMMON DRAIN COMMON DRAIN COMMON DRAIN COMMON DRAIN COMMON DRAIN COMMON DRAIN COMMON DRAIN COMMON DRAIN GATE SOURCE GATE SOURCE GATE SOURCE GATE SOURCE
CASE 648-08 ISSUE R 16-LEAD PLASTIC DIP
MC14578 Sensors Freescale Semiconductor 5
NOTES
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NOTES
MC14578 Sensors Freescale Semiconductor 7
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MC14578 Rev. 2 05/2005

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